深圳市亿芯电子科技有限公司

【产品名称】 BC847BS 【产品类别】 三极管 【市 场 价】 【本 站 价】 【产品用途】 BC847BS,原装NXP通用三极管BC847BS 【产品规格】 【生产厂家】 NXP 【产品说明】 BC847BS,原装NXP通用三极管BC847BS,深圳市亿芯电子科技有限公司 【产品名称】 BC847BS 【产品类别】 三极管 【市 场 价】 【本 站 价】 【产品用途】 BC847BS,原装NXP通用三极管BC847BS 【产品规格】 【生产厂家】 NXP 【产品说明】 BC847BS,原装NXP通用三极管BC847BS,深圳市亿芯电子科技有限公司 Philips SemiconductorsProduct specification NPN general purpose double transistorBC847BS FEATURESPINNING  Low collector capacitancePINDESCRIPTION  Low collector-emitter saturation voltage1, 4emitterTR1; TR2  Closely matched current gain2, 5baseTR1; TR2  Reduces number of components and board space6, 3collectorTR1; TR2  No mutual interference between the transistors. APPLICATIONS  General purpose switching and amplification. DESCRIPTION NPN double transistor in an SC-88 plastic package. PNP complement: BC857BS. MARKING handbook, halfpage 654 123 Top view MAM340 654 TR2 TR1 123 TYPE NUMBERMARKING CODE BC847BS1Ft Fig.1 Simplified outline (SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT Per transistor VCBOcollector-base voltageopen emitter-50V VCEOcollector-emitter voltageopen base-45V VEBOemitter-base voltageopen collector-5V ICcollector current (DC)-100mA ICMpeak collector current-200mA IBMpeak base current-200mA Ptottotal power dissipationTamb ? 25 C-200mW Tstgstorage temperature-65+150C Tjjunction temperature-150C Tamboperating ambient temperature-65+150C Per device Ptottotal power dissipationTamb ? 25 C; note 1-300mW Note 1. Device mounted on an FR4 printed-circuit board. 1999 Apr 282 Philips SemiconductorsProduct specification NPN general purpose double transistorBC847BS THERMAL CHARACTERISTICS SYMBOLPARAMETERCONDITIONSVALUEUNIT Per device Rth j-athermal resistance from junction to ambientnote 1416K/W Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT Per transistor ICBOcollector cut-off currentIE = 0; VCB = 30 V--15nA IE = 0; VCB = 30 V; Tj = 150 C--5mA IEBOemitter cut-off currentIC = 0; VEB = 5 V--100nA hFEDC current gainIC = 2 mA; VCE = 5 V200-450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA-- IC = 100 mA; IB = 5 mA; note 1-- 100 300 mV mV VBEsatbase-emitter saturation voltageIC = 10 mA; IB = 0.5 mA-755-mV VBEbase-emitter voltageIC = 2 mA; VCE = 5 VmV Cccollector capacitanceIE = ie = 0; VCB = 10 V; f = 1 MHz--1.5pF Ceemitter capacitanceIC = ic = 0; VEB = 500 mV; f = 1 MHz-11-pF fTtransition frequencyIC = 10 mA; VCE = 5 V; f = 100 MHz100--MHz Philips SemiconductorsProduct specification NPN general purpose double transistorBC847BS FEATURESPINNING  Low collector capacitancePINDESCRIPTION  Low collector-emitter saturation voltage1, 4emitterTR1; TR2  Closely matched current gain2, 5baseTR1; TR2  Reduces number of components and board space6, 3collectorTR1; TR2  No mutual interference between the transistors. APPLICATIONS  General purpose switching and amplification. DESCRIPTION NPN double transistor in an SC-88 plastic package. PNP complement: BC857BS. MARKING handbook, halfpage 654 123 Top view MAM340 654 TR2 TR1 123 TYPE NUMBERMARKING CODE BC847BS1Ft Fig.1 Simplified outline (SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT Per transistor VCBOcollector-base voltageopen emitter-50V VCEOcollector-emitter voltageopen base-45V VEBOemitter-base voltageopen collector-5V ICcollector current (DC)-100mA ICMpeak collector current-200mA IBMpeak base current-200mA Ptottotal power dissipationTamb ? 25 C-200mW Tstgstorage temperature-65+150C Tjjunction temperature-150C Tamboperating ambient temperature-65+150C Per device Ptottotal power dissipationTamb ? 25 C; note 1-300mW Note 1. Device mounted on an FR4 printed-circuit board. 1999 Apr 282 Philips SemiconductorsProduct specification NPN general purpose double transistorBC847BS THERMAL CHARACTERISTICS SYMBOLPARAMETERCONDITIONSVALUEUNIT Per device Rth j-athermal resistance from junction to ambientnote 1416K/W Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT Per transistor ICBOcollector cut-off currentIE = 0; VCB = 30 V--15nA IE = 0; VCB = 30 V; Tj = 150 C--5mA IEBOemitter cut-off currentIC = 0; VEB = 5 V--100nA hFEDC current gainIC = 2 mA; VCE = 5 V200-450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA-- IC = 100 mA; IB = 5 mA; note 1-- 100 300 mV mV VBEsatbase-emitter saturation voltageIC = 10 mA; IB = 0.5 mA-755-mV VBEbase-emitter voltageIC = 2 mA; VCE = 5 VmV Cccollector capacitanceIE = ie = 0; VCB = 10 V; f = 1 MHz--1.5pF Ceemitter capacitanceIC = ic = 0; VEB = 500 mV; f = 1 MHz-11-pF fTtransition frequencyIC = 10 mA; VCE = 5 V; f = 100 MHz100--MHz PMEG6010CEJ NXP 2013+ 15000 0 SOD-323F PMEG2010AET NXP 2013+ 15000 0 SOT-23 PMEG2010AEH NXP 2013+ 15000 0 SOD123F PMEG4010CEJ NXP 2013+ 15000 0 SOD-323F PMEG3010CEJ NXP 2013+ 15000 0 SOD-323F PMEG3005EB NXP 2013+ 15000 0 SOD-523 PMEG3005EL NXP 2013+ 15000 0 SOD882 PMEG6002EB NXP 2013+ 15000 0 SOD-523 PMEG6002TV NXP 2013+ 15000 0 SOT666 PMEG4010EJ NXP 2013+ 15000 0 SOD-323F PMEG2005AEA NXP 2013+ 15000 0 SOD-323 PMEG3005AEA NXP 2013+ 15000 0 SOD-323 PMEG4005AEA NXP 2013+ 15000 0 SOD-323 PMEG1030EJ NXP 2013+ 15000 0 SOD-323F PMEG1020EA NXP 2013+ 15000 0 SOD-323 PMEG2005EB NXP 2013+ 15000 0 SOD-523 PMEG2005AEV NXP 2013+ 15000 0 SOT666 PMEG2010EJ NXP 2013+ 15000 0 SOD-323F PMEG2010ET NXP 2013+ 15000 0 SOT-23 PMEG2010EA NXP 2013+ 15000 0 SOD-323 PMEG3002AEB NXP 2013+ 15000 0 SOD-523 PMEG2010AEB NXP 2013+ 15000 0 SOD-523 PMEG2020EJ NXP 2013+ 15000 0 SOD-323F PMEG6010AED NXP 2013+ 15000 0 SSOP6 PMEG3015EJ NXP 2013+ 15000 0 SOD-323F PMEG4002EB NXP 2013+ 15000 0 SOD-523 PMEG2020EJ NXP 2013+ 15000 0 SOD-323F PMEG3020CEP NXP 2013+ 15000 0 SOD-128 PMEG2005AEA NXP 2013+ 15000 0 SOD-323 PMEG3005AEA NXP 2013+ 15000 0 SOD-323 PMEG4005AEA NXP 2013+ 15000 0 SOD-323 PMEG2010EJ NXP 2013+ 15000 0 SOD-323F PMEG2010ET NXP 2013+ 15000 0 SOT-23 PMEG2010EA NXP 2013+ 15000 0 SOD-323 PMEG3010EB NXP 2013+ 15000 0 SOD-523 PMEG2015EJ NXP 2013+ 15000 0 SOD-323F PMEG1020EJ NXP 2013+ 15000 0 SOD-323F PMEG1020EV NXP 2013+ 15000 0 SOT-666 PMEG2015EA NXP 2013+ 15000 0 SOD-323 PMEG2010ER NXP 2013+ 15000 0 SOD-123 PMEG2005AEL NXP 2013+ 15000 0 SOD-882 PMEG3015EV NXP 2013+ 15000 0 SOT666 PMEG3010EP NXP 2013+ 15000 0 SOD-128 PMEG4010ER NXP 2013+ 15000 0 SOD-123 PMEG2010AEK NXP 2013+ 15000 0 SOT346 PMEG3010ER NXP 2013+ 15000 0 SOD-123 PMEG3010EB NXP 2013+ 15000 0 SOD-523 PMEG2010EV NXP 2013+ 15000 0 SOT666 PMEG4010EP NXP 2013+ 15000 0 SOD-128 PMEG3002TV NXP 2013+ 15000 0 SOT666 PMEG3020ER NXP 2013+ 15000 0 SOD-123 PMEG3020CEP NXP 2013+ 15000 0 SOD-128 PMEG2015EV NXP 2013+ 15000 0 SOT666 PESD5V0S1BA NXP 2013+ 26000 0 SOD-323 PESD5V0S1BB NXP 2013+ 26000 0 SOD-523 PESD5V0X1BT NXP 2013+ 26000 0 SOT-23 PESD5V0S1UA NXP 2013+ 26000 0 SOD-323 PESD3V3U1UA NXP 2013+ 26000 0 SOD-323 PESD5V0U1UA NXP 2013+ 26000 0 SOD-323 PESDXL2BT NXP 2013+ 26000 0 SOT-23 PESD5V0S2BT NXP 2013+ 26000 0 SOT-23 PESDXS2UT NXP 2013+ 26000 0 SOT-23 PESDXS2UAT NXP 2013+ 26000 0 SOT-23 PESD5V0U2BT NXP 2013+ 26000 0 SOT-23 PESD5V0U1BA NXP 2013+ 26000 0 SOD-323 PRTR5V0U1T NXP 2013+ 26000 0 SOT-23 PTVS3V3S1UR NXP 2013+ 26000 0 SOD-123W PTVS5V0S1UR NXP 2013+ 26000 0 SOD-123W PTVS6V0S1UR NXP 2013+ 26000 0 SOD-123W PTVS6V5S1UR NXP 2013+ 26000 0 SOD-123W PTVS7V0S1UR NXP 2013+ 26000 0 SOD-123W PTVS7V5S1UR NXP 2013+ 26000 0 SOD-123W PTVS8V0S1UR NXP 2013+ 26000 0 SOD-123W PTVS8V5S1UR NXP 2013+ 26000 0 SOD-123W PTVS9V0S1UR NXP 2013+ 26000 0 SOD-123W PTVS10VS1UR NXP 2013+ 26000 0 SOD-123W PTVS11VS1UR NXP 2013+ 26000 0 SOD-123W PTVS12VS1UR NXP 2013+ 26000 0 SOD-123W PTVS13VS1UR NXP 2013+ 26000 0 SOD-123W PTVS14VS1UR NXP 2013+ 26000 0 SOD-123W PTVS15VS1UR NXP 2013+ 26000 0 SOD-123W PTVS16VS1UR NXP 2013+ 26000 0 SOD-123W PTVS17VS1UR NXP 2013+ 26000 0 SOD-123W PTVS18VS1UR NXP 2013+ 26000 0 SOD-123W